Product technical note

PLD905-40W-MCL small-spot FAC pulsed laser diode for single-photon ranging

A model-level technical page covering the 40 x 18 um emitter, four-layer stack, FAC fast-axis compression, 40 W pulsed output, spot characteristics and single-photon ranging integration.

English 905 nm | 40 W | FAC | 40 x 18 um Updated 2026-10-23
905 nm · FAC PULSED LASER DIODE

Small Light-emitting Area
Illuminate a Smaller Spot

PLD905-40W-MCL is based on a 40 × 18 μm tiny emission area, using FAC fast-axis compression design and a single-chip four-epitaxial-stacked emitter structure, targeting system requirements such as small spot, long-distance ranging, and precise target selection.

40 W Typical Peak Power4 Layers Epitaxial stacked emitter40 × 18 μm Emitting Area905 nm Near-infrared
PLD905 · MICRO APERTUREOPTICAL DESIGN
PLD905-40W-MCL TO56 metal package physical diagram
40 × 18μm aperture
TO56 metal package
FAC · 4 emitters
STACKED EMISSIONSMALL SPOT CONCEPTSPOT4-LAYER
Conceptual illustration, does not represent the actual measured size of the target surfaceMICRO-SPOT DESIGN
40 WTypical peak optical output
40 WTypical optical peak output powerDatasheet characteristic parameters: 37–44 W
4 emission layersSingle-Chip Epitaxial Stack StructureNot four independent LD assemblies
40 × 18 μmChip light-emitting area sizeSmall light source, laying the foundation for spot design
1–100 nsFor short-pulse operating modeSpecific driving conditions must meet rated values
WHY SMALL SPOT

Not only focus on power, but also on
Where the Energy Falls on the Target

For ranging systems, the transmitting end must not only provide sufficient peak power but also be designed together with collimating optics, receiving field of view, and target size. A finer spot helps improve target selectivity, but the final performance must be confirmed through complete optical system testing.

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01 / MICRO APERTURE

40 × 18 μm micro light-emitting area

The small-sized chip emission area provides a design basis for compact optical systems. Combined with suitable collimation and shaping lens sets, it helps control the emitted beam and is optimized for smaller target illumination areas.

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02 / FAC DESIGN

FAC fast-axis compression design

The product specification clearly adopts a Fast Axis Collimation (FAC) design. It is aimed at shaping the laser diode output light to help the system deal with the divergence of light emitted from the chip; lens configuration and assembly quality affect the final beam size.

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03 / FOUR EMITTERS

Single-Chip Four-Layer Epitaxial Stack

A single chip contains 4 epitaxially stacked emitters, forming the four-layer lighting effect shown in the datasheet. The integrated design reduces the discrete installation and alignment steps required for multiple separate emitter chips.

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04 / TARGET SELECTIVITY

Designed for fine target selection

When facing golf flags, small reflective targets, or complex backgrounds, a small spot can reduce the proportion of the beam covering the surrounding background, helping the system concentrate ranging energy on the desired measurement point.

BEAM COLLIMATION SIMULATOR

Comparison of the original spots of the dual lasers with 1200 m collimation

Select two 905 nm lasers above and below, set up collimating lenses for each, and compare the 1200 m spot results with simulated spot changes side by side on the right.

A
LASER A

Laser A

Original Light Emitting Area220 × 18 μm
Slow Axis Divergence Angle9°
Fast Axis Divergence Angle6°
ONE-LENS DATA

Collimating Lens A

SIDE VIEW · SLOW AXISCLEAR
CHIP LENS BEAM
Chip220 μm · SLOW
Effective Aperture20 mm
B
LASER B

Laser B

Original Light Emitting Area40 × 18 μm
Slow Axis Divergence Angle9°
Fast Axis Divergence Angle25°
ONE-LENS DATA

Collimating Lens B

SIDE VIEW · SLOW AXISCLEAR
CHIP LENS BEAM
Chip40 μm · SLOW
Effective Aperture6 mm

Reading Product Database...

Fixed Simulation Distance1200 m
Waiting for both lasers to calculate...
A—
—
Original Spot · Slow Axis—
Original Spot · Fast Axis—
Collimated Spot · Slow Axis—
Collimated Spot · Fast Axis—
Slow Axis After Collimation—
Fast Axis After Collimation—
Slow shaft compression—
Fast shaft compression—
B—
—
Original Spot · Slow Axis—
Original Spot · Fast Axis—
Collimated Spot · Slow Axis—
Collimated Spot · Fast Axis—
Slow Axis After Collimation—
Fast Axis After Collimation—
Slow shaft compression—
Fast shaft compression—

1200 m Simulated Spot Variation

Original and collimated spots displayed on the same logarithmic scale
A · Original—
A · Collimated—
B · Original—
B · Collimated—

Calculate the typical luminous area and FWHM divergence angle using the database, and make a simplified estimate according to the Gaussian beam far field and diffraction limit. The simulated spot uses a logarithmic scale, making it easier to observe both meter-scale original spots and sub-meter collimated spots; actual results still require full system testing.

HOW IT WORKS

Four-layer light emission, how does it serve small spot systems?

The multi-emitter layer structure inside the chip is not the same concept as the final spot at the target. Below we explain the relationship between 'chip structure — emitted divergence — optical shaping — target spot' separately.

Near-field four-layer linear emission effect diagram in the PLD905-40W-MCL datasheet

Datasheet near-field diagram: four-layer linear lighting effect

The image comes from the PLD905-40W-MCL (V3.0) datasheet. It shows the near-field/emission effect of the device and is not equivalent to a far-field target spot test.

STACKED EMITTER CONCEPT

One chip, four epitaxial stacked emitters

The schematic structure is used to help understand the stacking relationship; the actual internal epitaxial structure of the chip is subject to the manufacturing process and device cross-section data.

Layer 04Emission Layer
EMITTER 4
Layer 03Emission Layer
EMITTER 3
Layer 02Emission Layer
EMITTER 2
Layer 01Emission Layer
EMITTER 1
Design Key Points:The tiny emission area, FAC output shaping, and back-end optical system need to be optimized collaboratively. The 40 × 18 μm chip emission area cannot be used alone to directly calculate the spot diameter on long-distance targets.
STEP 01

Chip Emission

Small emission area and four-layer epitaxial stack structure provide pulsed light output.

STEP 02

FAC and collimation

Use optical elements to control the divergence angle in different directions.

STEP 03

Far-field Propagation

Beam size varies with distance, optical design, and assembly errors.

STEP 04

Small target spot

Confirm spot size, uniformity, and energy distribution through prototype testing.

APPLICATIONS

From golf flag locking to long-distance single-photon ranging

PLD905-40W-MCL can serve as a 905 nm pulsed emission source, embedded in laser rangefinders, laser sensors, and drone ranging systems. Ranging distance, accuracy, and anti-interference ability are determined by the complete transmit/receive link.

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Golf flag and fine target ranging

Targets like flagpoles are relatively small with rich surrounding backgrounds. Small spot emission design helps reduce the proportion of the beam covering background areas, improving target selectivity together with the receiving field of view and algorithms.

FLAG LOCK · TARGET SELECTIVITY
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Long-distance single-photon reception ranging solution

Combined with high-sensitivity single-photon detectors, narrow-band filters, time-correlated detection electronics, and an appropriate receiving aperture, a long-distance weak-echo ranging link can be constructed. The specific ranging distance in kilometers cannot be guaranteed by the transmitter parameters alone.

SINGLE-PHOTON RECEIVER SYSTEM
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Drone Ranging and Obstacle Avoidance Perception

The lightweight TO56 transmitter can be used for the development of airborne ranging sensors, near-to-far distance measurements, and emission-end solutions for spatial perception. The full system needs to verify vibration, temperature, power consumption, and eye safety requirements.

UAV RANGING · OBSTACLE AWARENESS
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Special optoelectronic and outdoor measurement equipment

Suitable for evaluation in professional laser rangefinders, industrial measurement, and special optoelectronic systems. Its advantages lie in the compact device, short pulse output, and compatibility with small spot optical schemes for system integration.

SPECIALTY OPTOELECTRONICS

Regarding "obstacle penetration": A small spot does not mean the laser can penetrate opaque objects. A more accurate system benefit is in sparse occlusion environments like branches and leaves, combined with pointing and echo processing, trying to select targets behind gaps while suppressing part of the background mixed echo; actual effects must be confirmed by field testing.

INTEGRATION VALUE

Single-chip integration: leaving room for consistency and assembly efficiency.

Compared with a solution consisting of multiple independent laser chips, single-chip four-emission-layer integration can reduce the assembly and alignment steps between discrete chips; the specific mass production consistency still needs to be evaluated based on batch data, aging tests, and full system verification.

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Engineering value from device to module

  • ✓Structural integration:Four epitaxial stack emitters are integrated into a single chip, reducing the steps of assembling separate chips.
  • ✓Simplified alignment link:Avoid partial assembly variables caused by separately positioning multiple emitting chips.
  • ✓Compact package:TO56 metal package form, convenient for embedding in ranging modules for mechanical and thermal design.
  • ✓Traceable selection:Available in two versions: three-pin and 2.0 mm pitch, selection must follow electrical definition.
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The small spot is not determined only by the chip

  • ✓Transmitting End:Chip light-emitting area, divergence angle, FAC, and optical surface quality.
  • ✓Optical End:Collimation focal length, effective aperture, aberration, assembly eccentricity and tilt.
  • ✓Target End:Distance, target reflectivity, posture, background, and atmospheric conditions.
  • ✓Receiving End:Receiving aperture, field of view, filter bandwidth, detector performance, and time gating.
Engineering suggestion: When evaluating a small spot, simultaneously record spot diameter, energy distribution, peak power, pulse width, and temperature conditions at different distances, rather than drawing conclusions based solely on the light-emitting area size.
SPECIFICATION CURVES

Selection aided by real specification curves

The following images are taken from the typical characteristic curves in the product datasheet to show device characteristic trends; actual values and discrete ranges are subject to the corresponding test reports.

01 / POWER · VOLTAGE · CURRENTPLD905-40W-MCL datasheet power-voltage-current curve

Power—voltage—current relationship

Specification standard conditions: Pulse width 100 ns, frequency 3 kHz, ambient temperature 25°C.

02 / SPECTRAL CHARACTERISTICSPLD905-40W-MCL 905nm spectral curve

905 nm spectral characteristics

Typical spectral width approximately 7 nm; emission wavelength varies with junction temperature and operating conditions.

03 / FAR-FIELD PATTERNPLD905-40W-MCL far-field divergence angle curve

Far-Field Divergence Characteristics

Used to understand divergence distribution in different directions; final collimation effect depends on system optical design.

04 / PACKAGE DRAWINGPLD905-40W-MCL TO56 package dimension diagram

TO56 package outline reference

Includes the PLD905-40W-MCL and PLD905-40W-MCL-2.0 versions. Before procurement and assembly, please verify mechanical dimensions and pin definitions against the current official drawings.

TECHNICAL DATA

PLD905-40W-MCL Technical Specifications

The following parameters are from the "PLD905-40W-MCL (V3.0)" datasheet. Unless otherwise specified, characteristic parameters are defined at TA = 25°C.

ParametersTypical values / rangeUnitDescription
Product ModelPLD905-40W-MCL / PLD905-40W-MCL-2.0—TO56 Metal Package
Peak Output Power40(37–44)WTypical value 40 W; maximum rated value in datasheet 44 W (short-term operation)
Emission Wavelength905(895–915)nmSpecification Characteristics Parameters
Spectral width (FWHM)7nmTypical Value
Wavelength Temperature Coefficient0.28nm/KTypical value; wavelength is not constant
Epitaxial stacked emitter4LayerSingle-Chip Integration
Light-emitting area size40 × 18μmChip light-emitting area, not the spot size on the target surface
Operating Pulse Width Range1–100nsApplicable range given by product characteristics; ultimately based on driving conditions.
Standard operating conditions (datasheet terminology)100 ns / 3 kHz / 12 A / 25°C—For Typical Characteristic Curve Conditions
Operating Voltage12.6(12–13.2)VTypical values (TA = 25°C)
Operating Current12(11–13)ATypical values (TA = 25°C)
Threshold current0.75(0.5–1)ATypical values (TA = 25°C)
Beam Divergence Angle (Parallel to PN Junction, FWHM)Typical 9 / Maximum 10°Specification Definition
Beam Divergence Angle (Perpendicular to PN Junction, FWHM)Typical 6 / Max 8°Specification Definition
Operating Temperature−40 to 85°CDevice Operating Range
Storage Temperature−40 to 100°CStorage Range
Reverse Voltage20VMaximum rating
Duty cycle0.1%Short-term operating conditions in the maximum rated value table

Parameter note: The typical data in the datasheet are statistical results and do not guarantee that each device exactly equals the typical value. Device operating conditions, pulse shapes, junction temperature, and driving circuits all affect the actual output.

PULSE BASICS

Interactive calculation: understand peak power, pulse energy, and average power.

High peak power does not necessarily mean high average power. For a pulsed laser, pulse width and repetition rate jointly determine energy output and duty cycle.

Theoretical single-pulse energy4.00 μJIdeal rectangular pulse estimation
Theoretical average optical power12.0 mWSingle pulse energy × repetition frequency
DUTY CYCLE CHECK

Duty cycle and driving conditions

Drag the parameters on the left to observe the duty cycle changes. The device's actual operation must simultaneously meet pulse width, peak current, temperature rise, maximum rated value, and driving circuit constraints.

Current duty cycle0.030%
0%Reference maximum rated value in the datasheet: 0.1%

The current duty cycle is below the 0.1% maximum rated reference in the datasheet, but specific test conditions and the full device ratings still need to be confirmed.

Estimation formula: Single pulse energy ≈ peak power × pulse width; average power ≈ single pulse energy × repetition rate. The calculation assumes a rectangular pulse; the actual pulse energy needs to be measured based on the real waveform integration; the calculated results must not replace product specifications or safety evaluations.

ENGINEERING FAQ

Common Questions Before Selection

Is 40 × 18 μm the spot size at the target?

No. This is the chip’s emitting area size. The spot on the target is also affected by divergence angle, collimating lens focal length, lens aperture, assembly, and propagation distance. It is recommended to confirm via complete system spot testing.

Does 40 W represent continuous output power?

No. This model is a pulsed laser diode, and 40 W is the typical peak output power. The average optical power depends on the pulse waveform, pulse width, and repetition rate.

Can it directly ensure long-distance single-photon ranging?

It cannot be guaranteed by the transmitter alone. Long-distance single-photon ranging requires supporting detectors, receiving optics, narrow-band filtering, time measurement electronics, and background suppression algorithms, combined with target reflectivity and environmental testing.

Does a small spot mean it can penetrate solid obstacles?

Not implied. A small spot mainly helps with target selection and reducing part of the background mixing. For opaque objects, 905 nm laser cannot be simply advertised as penetrative; scenarios like gaps in sparse vegetation should be described according to actual test results.

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Laser Safety Tips

905 nm is invisible near-infrared light and may cause eye damage. The specification requires that devices follow the IEC 60825-1 laser product safety requirements. During testing and integration, light shielding, interlocks, beam termination, and appropriate protective measures should be set up to avoid direct viewing or reflection into the eyes.

ENGINEERING SUPPORT

Restore the small spot scheme to real test indicators

Planning to introduce the PLD905-40W-MCL into a ranging module? It is recommended to also confirm working pulse parameters, drive circuitry, thermal path, optical collimation solution, target surface spot indicators, and receiving link parameters.

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Recommended Solution Communication Information

Target measurement range, target size and reflectivity, required spot diameter, repetition rate, pulse width, type of receiving detector, operating temperature, and package pin version.

Official Website: www.leirte.com
Company:Shenzhen LaserTech Optoelectronics Co., Ltd.
MODEL SELECTION

PLD905-40W-MCL

905 nm · FAC fast-axis collimation · Four emission layers · TO56 metal package

Three-pin version2.0 mm pitch version
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