905 nm Pulsed Laser Diode Chip
905LD50W-A
50 W peak 905 nm chip, 3-layer stack
A 905 nm edge-emitting laser chip built on strained quantum-well material with a stacked tunnel-junction structure. The 3-layer stack reaches 50 W peak power while keeping forward current low, which lowers driver cost. The chip is designed for both plastic and hermetic metal packaging.
50 WPeak power
905 nmWavelength
Estimated range
Range estimates apply to pulsed transmitter parts. This device is specified by its own parameters above.
Every parameter on this page is transcribed from the manufacturer datasheet.
905LD50W-A chip specification
| Working wavelength | 895 - 915 nm |
|---|---|
| Peak output power | 50 W |
| Number of stacks | 3 |
| Fast-axis divergence (FWHM) | 25 / 28 / 31 deg |
| Slow-axis divergence (FWHM) | 8 / 10 / 12 deg |
| Threshold current | 1.0 A |
| Operating current | 22 A |
| Operating temperature | -15 to +40 C |
| Storage temperature | -40 to +125 C |
| Package | Bare die |
Key features
- 50 W peak output power
- 3-layer cascade structure
- Strained quantum-well material
- Narrow far-field divergence
- High optical power density
- RoHS compliant
This part is used in these application teardowns:
Typical applications
- Infrared ranging modules
- Infrared illumination
- Custom laser packaging
- Cost-optimised sensor builds
Need this part in a specific configuration?
Fibre pigtail, fast-axis collimation, a matched driver board or a filtered receiver - describe the build and we will quote against it.