Product technical note
A model-level technical page covering the three-chip vertical stack, 905 nm pulsed output, 300 W peak power, 5 kHz repetition rate, multi-layer spot behaviour, specifications and application notes.
The PLD905-300W-M stacks three 230 × 10 μm emitting-area laser chips longitudinally, using stacked tunnel junction technology and metal packaging, achieving high peak pulse power in a compact device, providing a high-power light source option for laser ranging, laser sensing, and LiDAR transmitter applications.
Product Model: PLD905-300W-M · Shenzhen LaserTech Optoelectronics Co., Ltd.
The design focus of the PLD905-300W-M is to organize multiple emitting chips within a limited device package space and achieve pulsed output through stacked tunnel junction technology and metal packaging. For ranging transmitters, this represents an engineering approach that pursues high peak power and a compact device form factor.
A slender emission area design is adopted, focusing on current injection and light output organization within a limited chip area. Here, the size refers to the emission area of a single chip, not the entire package size.
The product manual indicates the use of stacked tunnel junction technology and three vertically stacked chips, combined with metal packaging, to achieve multi-chip cooperative operation.
Under specified pulse drive conditions, the device's typical pulse power can reach 300 W. This value is a pulse power specification and does not represent continuous output of 300 W.
The datasheet gives a light source size of 220 × 360 μm, and the typical parameter table gives a luminous size of 230 × 360 μm; selection and mechanical design should be based on the final drawings and confirmed specification version.
This product solution focuses not only on the power of a single emitting area but also on the output light pattern after the combination of multi-chip structure and system optical design. The luminous effect diagram in the datasheet shows multiple sets of parallel bright lines; in this solution introduction, it is presented visually as the "nine-layer spot" effect.
"Three-chip stack" describes the structural arrangement of the chips, while "nine-layer spot" describes the emitted light pattern shown in the current solution. They are related but not the same concept: the final number of spots, spacing, uniformity, and irradiation position are also influenced by collimation/shaping optics, assembly method, and actual driving conditions.
Provides the device basis for emission optics design requiring specific spot arrangements.
Control the spot position, divergence angle, and directionality through lens groups and mechanical references.
Pulsed lasers release energy in a very short period of time. "300 W pulse power" emphasizes the instantaneous power level during the pulse; the average optical power also depends on pulse width, repetition rate, and the actual pulse waveform.
Adjust the pulse width and repetition frequency, understand the relationship between peak power, single pulse energy estimation, and average power.
Calculation assumptions: peak power is treated as 300 W, and the pulse is approximated as a rectangular wave. This is only for understanding quantity relationships, not actual measured product data, and does not replace the specification test report.
Calculation relationship: single pulse energy ≈ peak power × pulse width; average power ≈ single pulse energy × repetition frequency.
Describes the power level reached by a pulse during output. Suitable for discussing short-term high-energy output capability, but cannot be used alone to derive the actual ranging distance.
Indicates the number of pulses emitted per unit time. A higher repetition frequency helps the system obtain echo samples more frequently, but the actual update rate also depends on the ranging algorithm and signal processing.
Reflects average output over a longer time scale. It affects thermal design and power supply design, and needs to be evaluated comprehensively in combination with pulse waveform, drive conditions, and thermal path.
High peak pulses, compact packaging, and configurable pulse width are the main values of the PLD905-300W-M for range-finding sensor design. The following are possible application directions, and do not imply that the device alone can achieve a certain distance or environmental performance.
Design of the emitting light source for airborne distance measurement, terrain relative height perception, and surrounding space perception modules.
Designed for pulse time-of-flight (ToF) measurement architecture, providing a 905 nm near-infrared pulsed light source option for the transmit channel.
Can be evaluated for ranging devices, optoelectronic observation equipment, and other sensor subsystems requiring pulsed laser ranging.
The device uses a metal package form. For airborne ranging or specialized optoelectronic equipment, in addition to optical performance, attention must also be paid to driver layout, heat dissipation paths, connection reliability, assembly reference, and maintenance space.
The typical operating current in the specification is 40 A, and the operating voltage is 30 V; a special driver design with corresponding pulse current capability is required, and direct connection to a standard DC power supply is not recommended.
The datasheet specifies an operating temperature of −40 to 85℃. High ambient temperatures can affect device lifespan, and the system needs to evaluate thermal resistance, pulse duty cycle, and housing heat dissipation.
The fast axis and slow axis have different divergence angles, with specification values of ≤30° and ≤12°, respectively. If far-field collimation, rectangular beams, or multi-layer beam arrangements are needed, they should be implemented and calibrated by a specific optical system.
The following primary data are compiled from the product manual. The optical and electrical parameters in the table are typical values at 25℃; mass production selection and acceptance should be based on the final test report confirmed by both parties.
| Parameters | Typical Value |
|---|---|
| Central Wavelength | 905 nm |
| Wavelength tolerance | ±10 nm |
| Spectral Width | 7 nm |
| Operating Mode | Pulsed |
| Pulse power | 300 W |
| Emitting Size (Parameter Table) | 230 × 360 μm |
| Fast axis divergence angle θ⊥ | ≤30° |
| Slow axis divergence angle θ∥ | ≤12° |
| Beam Directivity | ＜1° |
| Parameters | Typical Value |
|---|---|
| Threshold current | 1 A |
| Operating Current | 40 A |
| Operating Voltage | 30 V |
| Pulse Width | 100 ns (typical) |
| Pulse Width Adjustment Range | 1–100 ns (product brief) |
| Repetition Frequency | 5 kHz |
| Duty cycle | 0.1% (Specification) |
| Operating Temperature | −40～+85℃ |
| Storage Temperature | −40～+85℃ |
| Wavelength Temperature Coefficient | 0.28 nm/℃ |
| Welding temperature | 260℃ |
No. This product is a pulsed laser diode, and 300 W is the typical pulse power listed in the datasheet. The average power depends on the actual pulse width, repetition rate, and pulse waveform, and 300 W should not be interpreted as continuous output power.
The three-chip stack describes the internal chip organization; the output light spot pattern is related to the chips, packaging, optical shaping, and testing observation conditions. The current solution shows a nine-layer spot effect; the detailed layer spacing and energy distribution need to be confirmed by empirical measurement.
Not recommended. The typical operating current in the specification is 40 A, and the operating voltage is 30 V. The product needs to be designed in coordination with pulse driving, heat dissipation, protection, and monitoring circuits. Pin definitions and driving timing should be checked before powering on.
The datasheet does not provide the maximum range distance. Evaluation requires coordinated adjustment of the emitter, beam-expanding/collimating optics, receiving aperture, detector, target reflectivity, ambient light, and algorithms; it is not appropriate to rely solely on the laser diode pulse power to promise range distance.
This cannot be used as an eye-safe light source. The product manual lists this series as Class 3 laser products and requires avoiding laser exposure to eyes and skin during operation. The 905 nm wavelength belongs to near-infrared, which is usually invisible, but invisibility does not mean it is harmless. Appropriate engineering protection and operating procedures must be implemented during use.
The datasheet specifies the device operating temperature as −40 to 85℃, but also notes that excessively high ambient temperatures can affect lifespan. Thermal design, aging, and lifetime requirements under specific pulsed conditions need to be verified in conjunction with product test reports and system cooling conditions.
The product manual marks this series as a Class 3 laser product. Avoid exposing eyes and skin to the laser during operation, and establish protection, interlock, labeling, and maintenance procedures according to applicable laser safety regulations. Do not look directly at the light source or output port simply because the beam is invisible.
Welcome to discuss pulse parameters, beam spot solutions, driving conditions, mechanical packaging, and system verification requirements.
Both codes reach the same engineer. Scan with the phone camera, or use the button below.
